it contains
2. Define pinch off Voltage.
3. Why is FET Voltage controlled and BJT current Controlled?
4. What are the differences between BJT and FET?
5. State Slew rate with equation.
6. Define CMRR
7. List out the ideal characteristics ...
• In semiconductor material, one half is doped by p-type impurity and other half is doped by N-type i
junction is formed.
• The plane dividing two hales or zones is called PN Junction.
• N-type – higher concentration of free electrons, P-type – High concentration of holes.
• Therefore, at the junction there is a tendency to diffuse over to the P-side from N-side, and from N-sid
called Diffusion.
• Free electrons move across the junction from N-type to P-type, the donor ions becomes +ve charged, th
is built on N-side of the junction.
• The free electrons uncover the negative acceptor ions by filling the holes. Therefore, a net –ve charge is e
the P-side of the junction.
, • On P-side, the net –ve charge prevents further diffusion of electrons into P-side. Similarly, the net +ve ch
side repels the hole crossing from P-side to N-side.
• Thus a barrier is set up, which is called as depletion layer, junction barrier or contact potential Vo.
• The magnitude of contact potential Vo varies with doping levels and temperature, 0.3 for germanium
silicon.
Forward Bias Condition
• When +ve terminal of battery is connected to P-type and -ve terminal to
N-type of PN junction diode, the bias is known as forward bias.
• The applied +ve potential repels the holes in P-type, and –ve potential
repels the electrons in the N-type.
• When applied potential is greater than barrier potential, the depletion
region and internal potential barrier disappear.
• When forward voltage (VF< Vo), then IF is almost Zero.
• For VF > Vo, then resulting in relatively large current flow in the circuit.
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